GaN HEMT

GaN_HEMT.jpg 100W in 0.2cc (500W/cc) , 180W in 1.2cc (150W/cc) • High Channel Temperature (Tch): Up to 250°C • Higher Impedance: ~50Ω (Easy to Match) • High Operating Voltage: 50V • High Breakdown Voltage: 350V • High Power: Up to 180W • High Efficiency: 60% @Psat • High Efficiency: 35% @WCDMA Pout (Ave) see Table I • High Gain: 16dB @2.1GHz • Excellent suitability with Digital Pre-Distortion System

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Product
Part NumberDatasheetRoHS Frequency (GHz)
P3dB Typ. (dBm)
Psat (dBm)
GL Typ. (dB)
GP Typ. (dB)
η@P3dB Typ. (%)
η@Pout Typ. (%)
IDS Typ. (mA)
IM3 Typ. (dBc)
Rth Typ. (°C/W)
Package
AvailabilityPrice
EGNB010MK 3.5 41 13 60 100 4.5 (17) In Stock
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EGNB030MK 2.7 46.5 13 60 200 2 (81) In Stock
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EGNB045MK 2.2 47.5 13 60 250 1.4 (221) In Stock
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