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Radiall USA, Inc.
GaN HEMT
100W in 0.2cc (500W/cc) , 180W in 1.2cc (150W/cc) • High Channel Temperature (Tch): Up to 250°C • Higher Impedance: ~50Ω (Easy to Match) • High Operating Voltage: 50V • High Breakdown Voltage: 350V • High Power: Up to 180W • High Efficiency: 60% @Psat • High Efficiency: 35% @WCDMA Pout (Ave) see Table I • High Gain: 16dB @2.1GHz • Excellent suitability with Digital Pre-Distortion System
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View all GaN HEMT
up to 6
Product
Part Number
Datasheet
RoHS
Frequency (GHz)
All
2.2
2.7
3.5
P3dB Typ. (dBm)
All
41
46.5
47.5
Psat (dBm)
All
GL Typ. (dB)
All
13
GP Typ. (dB)
All
η@P3dB Typ. (%)
All
60
η@Pout Typ. (%)
All
IDS Typ. (mA)
All
100
200
250
IM3 Typ. (dBc)
All
Rth Typ. (°C/W)
All
1.4
2
4.5
Package
All
Availability
Price
EGNB010MK
3.5
41
13
60
100
4.5
(17) In Stock
Quote
EGNB030MK
2.7
46.5
13
60
200
2
(81) In Stock
Quote
EGNB045MK
2.2
47.5
13
60
250
1.4
(221) In Stock
Quote
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