Aethercomm designs and manufactures high power, super broadband amplifiers employing Gallium Nitride (GaN) technology. Aethercomm GaN amplifiers are operated from +28Vdc or +50Vdc power supplies. The frequency range of these amplifiers is from 20MHz to 6.0 GHz in bands currently. Achievable power levels are up to 500+ watts. Aethercomm currently has numerous GaN designs covering multi-octave and decade bandwidths.Gallium Nitride amplifiers offer considerably better performance than conventional GaAs, LDMOS and VDMOS solutions. GaN amplifiers have a maximum junction temperature of 225ºC and this translates into base plate amplifier temperatures of 85ºC with no degradation in MTBF for the active devices.