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Eudyna GaN Products
Eudyna GaN HEMTs High Electron Mobility Transistors
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Eudyna Devices EGNB010MK
  • 100W in 0.2cc (500W/cc), 180W in 1.2cc (150W/cc)
  • High Channel Temperature (Tch): Up to 250°C
  • Higher Impedance: ~50O (Easy to Match)
  • High Operating Voltage: 50V
  • High Breakdown Voltage: 350V
  • High Power: Up to 180W
  • High Efficiency: 60% @Psat
  • High Efficiency: 35% @WCDMA Pout (Ave) see Table I
Cosel USA DC DC Converters  for GaN products
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Part Number Frequency (GHz) P3dB Typ. (dBm) GL Typ. (dB) ?@P3dB Typ. (%) IDS(DC) (mA) Rth Typ. (°C/W) Outline/Package Code
EGNB045MK 2.2 47.5 13.0 60 250 114 MK
EGNB030MK 2.7 46.5 13.0 60 200 2.0 MK
EGNB010MK 3.5 41.0 13.0 60 100 4.5 MK

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